TRILAYER RESIST ORGANIC LAYER ETCH

摘要

A METHOD OF FORMING DUAL DAMASCENE FEATURES IN A POROUS LOW-K DIELECTRIC LAYER (210) IS PROVIDED. VIAS (214) ARE FORMED IN THE POROUS LOW-K DIELECTRIC LAYER. AN ORGANIC PLANARIZATION LAYER (216) IS FORMED OVER THE POROUS LOW-K DIELECTRIC LAYER, WHEREIN THE ORGANIC LAYER FILLS THE VIAS. A PHOTORESIST MASK (228) IS FORMED OVER THE ORGANIC PLANARIZATION LAYER. FEATURES ARE ETCHED INTO THE ORGANIC PLANARIZATION LAYER COMPRISING PROVIDING A CO2 CONTAINING ETCH GAS AND FORMING A PLASMA FROM THE CO2 CONTAINING ETCH GAS, WHICH ETCHES THE ORGANIC PLANARIZATION LAYER. TRENCHES (256) ARE ETCHED INTO THE POROUS LOW-K DIELECTRIC LAYER USING THE ORGANIC PLANARIZATION LAYER AS A MASK. THE ORGANIC PLANARIZATION LAYER IS STRIPPED.