| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor layers which can manufacture a semiconductor laminate which has less variation in film composition and a precise CuInSe-based semiconductor film grown to a large grain size at a relatively low temperature.SOLUTION: A manufacturing method of a present embodiment of a semiconductor laminate having a base material and a CuInSe-based semiconductor film laminated on the base material comprises the following steps of: (a) forming a CuInS-based fine-grain dispersion film by coating a CuInS-based fine-grain dispersion on the base material; (b) forming a pre-sintered CuInS-based film by dehydrating and presintering the dispersion film; (c) forming the pre-sintered CuInSe-based film by bringing the pre-sintered CuInS-based film in contact with a selen-containing atmosphere; and (d) irradiating light beams on the pre-sintered CuInSe-based film to form the CuInSe-based semiconductor film. |
