| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light-emitting element and a semiconductor light-emitting element, capable of improving a yield by suppressing characteristic variations.SOLUTION: A semiconductor light-emitting layer 11 in which an n-type semiconductor layer for light emission, an active layer, and a p-type semiconductor layer are laminated on one surface of a rectangular substrate 10 is formed in a semiconductor light-emitting element 100. An electrode 20 directly connected to an electrode formed on a mounting substrate is formed in the semiconductor light-emitting layer 11. A phosphor layer 40 is formed on a surface (other surface) on the side opposite to the one surface of the substrate 10. A phosphor layer 80 is formed on a surface of the phosphor layer 40. |
