| 摘要 |
A manufacturing method of a light-emitting device includes: a die-bonding process in which a semiconductor light emitting element is placed on a bonding target member via an adhesive containing a silicone resin so that a surface opposite to an exposure surface faces the bonding target member, and the adhesive is heated to bond the semiconductor light emitting element to the bonding target member; and a wire-bonding process in which a wire is connected to the exposure surface. The semiconductor light emitting element includes a laminated semiconductor layer having a light emitting layer and an electrode including a metal layer containing Au and provided on the laminated semiconductor layer and a covering layer containing Ni or Ta and covering the metal layer, the thickness of the covering layer being set smaller than 100 nm and the exposure surface to expose the covering layer to the outside being formed. |
