发明名称 |
TRENCH MOSFET WITH TRENCHED FLOATING GATES HAVING THICK TRENCH BOTTOM OXIDE AS TERMINATION |
摘要 |
A power semiconductor power device having composite trench bottom oxide and multiple trench floating gates is disclosed. The gate charge is reduced by forming a pad oxide surrounding a HDP oxide on trench bottom. The multiple trenched floating gates are applied in termination for saving body mask. |
申请公布号 |
US2013330892(A1) |
申请公布日期 |
2013.12.12 |
申请号 |
US201313953026 |
申请日期 |
2013.07.29 |
申请人 |
HSIEH FU-YUAN;FORCE MOS TECHNOLOGY CO., LTD. |
发明人 |
HSIEH FU-YUAN |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|