发明名称 ION IMPLANTATION FABRICATION PROCESS FOR THIN-FILM CRYSTALLINE SILICON SOLAR CELLS
摘要 A front contact thin-film solar cell is formed on a thin-film silicon solar cell. Emitter regions, selective emitter regions, and a back surface field are formed through ion implantation processes. In one embodiment, front contact thin-film solar cell is formed on a thin-film silicon solar cell. Emitter regions, selective emitter regions, base regions, and a back surface field are formed through ion implantation processes.
申请公布号 US2013330872(A1) 申请公布日期 2013.12.12
申请号 US201213688062 申请日期 2012.11.28
申请人 RANA VIRENDRA V.;KAPUR PAWAN;MOSLEHI MEHRDAD M.;SOLEXEL, INC. 发明人 RANA VIRENDRA V.;KAPUR PAWAN;MOSLEHI MEHRDAD M.
分类号 H01L31/0236 主分类号 H01L31/0236
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