THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR

摘要

A thin-film transistor provided with the following: a gate electrode (2) located on top of a substrate (1); a gate-insulating layer (3) located on top of the gate electrode (2); a semiconductor layer (40) opposite the gate electrode (2) with the gate-insulating layer (3) interposed therebetween; a protective layer (6) that is located on top of the semiconductor layer (40) and contains an organic material; and a source electrode (8S) and drain electrode (8D) laid out opposite each other, at least parts of which are located on top of the protective layer (6). The protective layer (6) has a modified layer (62) produced by modification of a surface layer in a region exposed by the source electrode (8S) and the drain electrode (8D). At least part of said modified layer (62) is in contact with the semiconductor layer (40). The defect density (Nt, in cm- 3) of the semiconductor layer (40) and the taper angle (theta, in °) of the edge of the protective layer (6) satisfy the relation Nt <= 0.0556theta+16.86.