SILICON THROUGH VIA STRUCTURE AND METHODS OF FORMING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide methods of forming a silicon through via structure.SOLUTION: Methods may include forming a layer insulating film structure 16 including layer insulating films 12a-12d and internal wiring 14a-14c on a first side of a semiconductor layer, forming an isolation trench 18 through the semiconductor layer to form an outer semiconductor pattern 10a and an inner semiconductor pattern 10b. The isolation trench 18 is formed to expose the layer insulating films 12a-12d while enclosing the inner semiconductor pattern 10b. The methods may further include forming an insulating pattern 20 which covers a second side opposed to the first side of the semiconductor layer and an internal surface of the isolation trench 18, forming a via hole 30 through the inner semiconductor pattern 10b while spacing the via hole apart from the isolation trench 18 in such a manner that an upper part of the via hole 30 is enclosed with the insulating pattern 20 covering the second side of the semiconductor layer, and forming a via contact 24 in contact with the internal wires 14a-14c inside of the via hole 30.