| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem occurring in semiconductor integrated circuit device for automobile use and the like that aluminum pads of a semiconductor chip and the outside are connected with each other by wire bonding with gold wires and the like, in general, due to the convenience of mounting, but such semiconductor integrated circuit device is used for a long time under a relatively high temperature (approximately 150 degrees C) and poor connection occurs due to interaction between aluminum and gold.SOLUTION: A semiconductor device of a present embodiment comprises: an electrolytic gold plated surface film (gold-based metal plated film) provided on an aluminum-based bonding pads on a semiconductor chip which is a part of a semiconductor integrated circuit device (semiconductor device or electronic circuit device) via a barrier metal film; and gold bonding wires (gold-based bonding wire) for mutually connecting external leads provided on a wiring board (wiring base) and the like. |
