发明名称 |
INPUT BUFFER CIRCUIT AND SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To prevent breakdown of a low voltage-withstanding transistor receiving an input signal with a large potential level.SOLUTION: In a transistor 11 receiving an input signal at a gate, a drain or a source is connected to a back gate. A voltage change part 16 changes a voltage applied to the drain or the source in accordance with a potential level of the input signal so that a potential difference between the gate of the transistor 11 and the drain or the source becomes equal to or less than a voltage-withstanding electric voltage of the transistor 11. |
申请公布号 |
JP2013251869(A) |
申请公布日期 |
2013.12.12 |
申请号 |
JP20120127316 |
申请日期 |
2012.06.04 |
申请人 |
FUJITSU SEMICONDUCTOR LTD |
发明人 |
NAKAMOTO JUNKO;ISHIDA HIDEKI |
分类号 |
H03K19/003;H03K19/00;H03K19/0175 |
主分类号 |
H03K19/003 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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