发明名称 INPUT BUFFER CIRCUIT AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent breakdown of a low voltage-withstanding transistor receiving an input signal with a large potential level.SOLUTION: In a transistor 11 receiving an input signal at a gate, a drain or a source is connected to a back gate. A voltage change part 16 changes a voltage applied to the drain or the source in accordance with a potential level of the input signal so that a potential difference between the gate of the transistor 11 and the drain or the source becomes equal to or less than a voltage-withstanding electric voltage of the transistor 11.
申请公布号 JP2013251869(A) 申请公布日期 2013.12.12
申请号 JP20120127316 申请日期 2012.06.04
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 NAKAMOTO JUNKO;ISHIDA HIDEKI
分类号 H03K19/003;H03K19/00;H03K19/0175 主分类号 H03K19/003
代理机构 代理人
主权项
地址