SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device (100A) has: a first transparent electrode (7), a drain electrode (3d), and a source electrode (3s) formed on a substrate (2); an oxide layer (5) joined electrically to the source electrode and the drain electrode and containing a semiconductor region (5s); an insulating layer (8) formed on the oxide layer and the first transparent electrode; a gate electrode (9a) formed on the insulating layer; and a second transparent electrode (13) formed so as to overlap at least a part of the first transparent electrode with the insulating layer interposed therebetween. The oxide layer and the first transparent layer are formed of the same oxide film.