| 摘要 |
<p>The present invention provides a device for production of single crystals by the Czochralski process, equipped with: a crucible containing a molten starting material; a ring-shaped heater surrounding the crucible, for heating the molten starting material; a main chamber housing these parts; an electrode inserted into the main chamber from the bottom, for supporting the ring-shaped heater and supplying power; and a run-out pan situated at the bottom of the main chamber, for containing any molten starting material escaping from the crucible, wherein the device for production of single crystals has a run-out cover, situated at a location below the crucible and above the electrode, for preventing molten starting material escaping from the crucible from reaching the electrode. A device for production of single crystals, by which the electrode supporting the ring-shaped heater can be protected from run-out of molten starting material, can be provided thereby.</p> |
