| 摘要 |
PROBLEM TO BE SOLVED: To reduce characteristic variations of a plurality of hookup transistors.SOLUTION: A semiconductor memory includes: a memory cell array 10 having a plurality of memory cells and first and second dummy cells; a plurality of word lines connected to the plurality of memory cells; first dummy word lines connected to the first dummy cells; second dummy word lines connected to the second dummy cells; and row decoders 12. The row decoders 12 include: a plurality of hookup transistors individually connected to the plurality of word lines; first dummy hookup transistors connected to the first dummy word lines; and second dummy hookup transistors connected to the second dummy word lines. The first and second dummy hookup transistors are disposed on at least one end portion of a hookup transistor group. |
