| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which performs multiple plasma treatment processes in one process chamber.SOLUTION: A substrate processing apparatus includes: a process chamber; a support plate supporting the substrate in the process chamber; a gas supply unit supplying a gas to the process chamber; a first plasma generation unit that is provided so as to generate plasma in the process chamber; and a second plasma generation unit provided so as to generate plasma in the exterior of the process chamber. Etching process, ashing process, marginal part cleaning process, and rear surface cleaning process are sequentially performed to the substrate in the substrate processing apparatus. |
