发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which manufactures a pixel electrode with a concavo-convex shape without increasing the number of manufacturing steps.SOLUTION: In a manufacturing method of a semiconductor device, a projected part can be manufactured in accordance with a manufacturing process for a pixel TFT 1203 since reproducibility of the projected part is high when a photomask is used. The projected part is formed by stacking a semiconductor layer, a gate insulation film, and a conduction film as in the manufacturing process for the pixel TFT 1203. An interlayer insulation film is formed to cover the projected part formed thus, as well as a pixel TFT and a TFT included in a driver circuit formed in the same process. After the interlayer insulation film with a concavo-convex shape is formed, a pixel electrode is formed thereon. A surface of the pixel electrode has the concavo-convex shape according to the influence of the concavo-convex surface of the insulation film.
申请公布号 JP2013250568(A) 申请公布日期 2013.12.12
申请号 JP20130153334 申请日期 2013.07.24
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 FUJIMOTO ETSUKO;MURAKAMI TOMOHITO;YAMAZAKI SHUNPEI;EGUCHI SHINGO
分类号 G02F1/1343;G02F1/1368;H01L21/28;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/786 主分类号 G02F1/1343
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