发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which manufactures a pixel electrode with a concavo-convex shape without increasing the number of manufacturing steps.SOLUTION: In a manufacturing method of a semiconductor device, a projected part can be manufactured in accordance with a manufacturing process for a pixel TFT 1203 since reproducibility of the projected part is high when a photomask is used. The projected part is formed by stacking a semiconductor layer, a gate insulation film, and a conduction film as in the manufacturing process for the pixel TFT 1203. An interlayer insulation film is formed to cover the projected part formed thus, as well as a pixel TFT and a TFT included in a driver circuit formed in the same process. After the interlayer insulation film with a concavo-convex shape is formed, a pixel electrode is formed thereon. A surface of the pixel electrode has the concavo-convex shape according to the influence of the concavo-convex surface of the insulation film. |
申请公布号 |
JP2013250568(A) |
申请公布日期 |
2013.12.12 |
申请号 |
JP20130153334 |
申请日期 |
2013.07.24 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
FUJIMOTO ETSUKO;MURAKAMI TOMOHITO;YAMAZAKI SHUNPEI;EGUCHI SHINGO |
分类号 |
G02F1/1343;G02F1/1368;H01L21/28;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/786 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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