发明名称 DEFECT ANALYZING DEVICE FOR SEMICONDUCTOR DEVICE, DEFECT ANALYSIS METHOD FOR SEMICONDUCTOR DEVICE, AND PROGRAM
摘要 PROBLEM TO BE SOLVED: To provide a defect analyzing device for a semiconductor device that analyzes a defect of the semiconductor device regardless of the states of transistors.SOLUTION: A wiring extraction part extracts wiring included in an analytic region from design data associated with a semiconductor device. A wiring connection destination search part searches for an end point of the extracted wiring, and classified the extracted wiring into a predetermined wiring type. A wiring lightness determination part determines lightness of the extracted wiring on the basis of the wiring type and lightness correspondence information. A pseudo nondefective image generation part generates a pseudo nondefective image on which lightness of a region corresponding to the extracted wiring of an image simulating the analytic region on the basis of the determined lightness. A wiring connection destination search part classifies the extracted wiring into a wiring type in conduction of a transistor or a wiring type in non-conduction of the transistor. The pseudo nondefective image generation part generates a pseudo nondefective image in conduction of the transistor and a pseudo nondefective image in non-conduction of the transistor.
申请公布号 JP2013250062(A) 申请公布日期 2013.12.12
申请号 JP20120122745 申请日期 2012.05.30
申请人 RENESAS ELECTRONICS CORP 发明人 NIKAIDO MASATO
分类号 G01R31/302;H01L21/66 主分类号 G01R31/302
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