发明名称 MEASUREMENT OF TRANSISTOR GATE SOURCE CAPACITANCE ON A DISPLAY SYSTEM SUBSTRATE USING A REPLICA TRANSISTOR
摘要 Better performance can be provided for a display system that has semiconductor microelectronic components such as demultiplexors, gate line and data line drivers, and pixel switches formed on the display substrate, e.g., a glass substrate that constitutes part of an active matrix display panel. A gate source capacitance of a constituent transistor of one of these microelectronic components, e.g., a pixel thin film transistor (TFT) that is part of a particular display element, may be measured using a replica component that emulates the behavior of the component.
申请公布号 US2013328576(A1) 申请公布日期 2013.12.12
申请号 US201213610729 申请日期 2012.09.11
申请人 JAMAL SHAFIQ M.;BAE HOPIL;YOUN SANG Y.;YAO WEI H.;APPLE INC. 发明人 JAMAL SHAFIQ M.;BAE HOPIL;YOUN SANG Y.;YAO WEI H.
分类号 G01R27/26;G01R23/02 主分类号 G01R27/26
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