发明名称 METHOD FOR MAKING LIGHT EMITTING DIODE
摘要 A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer are epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A cermet layer is formed on the second semiconductor layer. A first electrode is applied to electrically connected to the first semiconductor layer. A second electrode is applied to electrically connected to the second semiconductor layer.
申请公布号 US2013330849(A1) 申请公布日期 2013.12.12
申请号 US201213729594 申请日期 2012.12.28
申请人 TSINGHUA UNIVERSITY;HON HAI PRECISION INDUSTRY CO., LTD. 发明人 ZHU JUN;ZHANG HAO-SU;ZHU ZHEN-DONG;LI QUN-QING;JIN GUO-FAN;FAN SHOU-SHAN
分类号 H01L33/20 主分类号 H01L33/20
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