发明名称 Electron Beam Lithography System and Method For Improving Throughput
摘要 An electron beam lithography method and apparatus for improving throughput is disclosed. An exemplary lithography method includes receiving a pattern layout having a pattern layout dimension; shrinking the pattern layout dimension; and overexposing a material layer to the shrunk pattern layout dimension, thereby forming the pattern layout having the pattern layout dimension on the material layer.
申请公布号 US2013327962(A1) 申请公布日期 2013.12.12
申请号 US201313971702 申请日期 2013.08.20
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 SHIN JAW-JUNG;LIN SHY-JAY;WANG WEN-CHUAN;LIN BURN JENG
分类号 H01J37/302 主分类号 H01J37/302
代理机构 代理人
主权项
地址