<p>The objective of the present invention is to provide a semiconductor device and an operation method thereof capable of preventing cell data from being damaged due to word line disturbance. The operation method of the semiconductor device according to the present invention includes the steps of: receiving a request for a first memory unit; judging data damage dangerousness of cells connected to a second word line adjacent to a first word line of the first memory unit corresponding to a requested address by referring to the information showing data damage dangerousness; and storing data of the cells connected to the second word line into the second memory unit in case that data damage dangerousness is judged to exist.</p>
申请公布号
KR20130136342(A)
申请公布日期
2013.12.12
申请号
KR20120060066
申请日期
2012.06.04
申请人
SK HYNIX INC.
发明人
MOON, YOUNG SUK;LEE, HYUNG DONG;KWON, YONG KEE;YANG, HYUNG GYUN;KIM, HONG SIK