FERROELECTRIC CRYSTAL FILM, ELECTRONIC COMPONENT, METHOD FOR MANUFACTURING FERROELECTRIC CRYSTAL FILM, AND DEVICE FOR MANUFACTURING FERROELECTRIC CRYSTAL FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a ferroelectric crystal film which achieves good transfer of the orientation of a seed-crystal film and uses a film-growth rate fit for mass production.SOLUTION: The method for manufacturing a ferroelectric crystal film comprises the steps of: forming an epitaxial growth seed-crystal film 14 on a substrate 10 by means of sputtering; forming, on the seed-crystal film, an amorphous film including a ferroelectric material by spin coating; and heating the seed-crystal film and the amorphous film under an oxygen atmosphere for oxidization and crystallization thereof, thereby forming a ferroelectric-coated sintered crystal film 15.