发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that highly and simultaneously satisfies high luminance, high efficiency, and high reliability.SOLUTION: The semiconductor light-emitting element includes: a stacked structure having a first semiconductor layer, a second semiconductor layer, and a light-emitting layer; and an electrode having a first metal layer provided on the side of the second semiconductor layer opposite to the side on which the light-emitting layer is provided and containing silver or silver alloy, and a second metal layer provided on the side of the first metal layer opposite to the side on which the second semiconductor layer is provided and containing an element of at least one of platinum, palladium, and rhodium. The second semiconductor layer is provided in contact with the interface between the second semiconductor layer and the first metal layer, and includes an interface layer containing silver. The density of the element in a region including the interface between the first metal layer and the second semiconductor layer is higher than the density of the element in a region apart from the interface of the first metal layer. The average particle diameter of silver in the first metal layer is smaller than or equal to 0.3 μm.
申请公布号 JP2013251572(A) 申请公布日期 2013.12.12
申请号 JP20130168118 申请日期 2013.08.13
申请人 TOSHIBA CORP 发明人 KATSUNO HIROSHI;OBA YASUO;KANEKO KATSURA;KUSHIBE MITSUHIRO
分类号 H01L33/40;H01L21/28 主分类号 H01L33/40
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