GROUP III NITRIDE SUBSTRATE AND SEMICONDUCTOR DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device in which degradation of properties is suppressed as a result of suppressing the degradation of qualities of epitaxial growing layer formed on a group III nitride substrate.SOLUTION: A group III nitride substrate 10 a surface layer 10a, the surface layer 10a contains 3 at.% to 25 at.% of carbon and contains a p type metal element of 5×10atoms/cmto 200×10atoms/cm, and an oxygen concentration of the surface layer is 3 at.% to 15 at.%.