发明名称 Ge SPUTTERING TARGET FOR THIN FILM DEPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a Ge sputtering target for thin film deposition which can perform DC sputtering.SOLUTION: A Ge sputtering target for thin film deposition has the composition containing 0.001 to 0.1 wt.% of Al, with the balance consisting of Ge and inevitable impurities.
申请公布号 JP2013249520(A) 申请公布日期 2013.12.12
申请号 JP20120125780 申请日期 2012.06.01
申请人 MITSUBISHI MATERIALS CORP 发明人 NAGAO MASAYOSHI
分类号 C23C14/34;C22C28/00 主分类号 C23C14/34
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