METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE OF PERIODIC TABLE GROUP 13 METAL NITRIDE

摘要

PROBLEM TO BE SOLVED: To provide a method capable of producing a periodic table group 13 metal nitride semiconductor substrate capable of forming a high quality device structure.SOLUTION: In a method for producing a periodic table group 13 metal nitride semiconductor substrate for growing a periodic table group 13 metal nitride semiconductor crystal using a periodic table group 13 metal nitride semiconductor base substrate 1 in which a crystal face of a main face 2 is a non-polar face or a semi-polar face, it is possible to produce the periodic table group 13 metal nitride semiconductor substrate capable of forming a high quality device structure by arranging grooves 3 with a depth not less than 6 μm in the main face 2 of the base substrate 1 and further advancing crystal growth such that gaps are formed between the base substrate 1 and the periodic table group 13 metal nitride semiconductor crystal.