| 摘要 |
A semiconductor memory device includes: a memory cell array configured to include a redundant cell array; a column selection line driver configured to select and drive a column of the redundant cell array and a column of the memory cell array; a plurality of unit redundant fuse circuits each configured to include a fuse and a fuse latch; a comparison logic array configured to include comparison logics that respectively correspond to the unit redundant fuse circuits; and a global address line set configured to transfer a column address to the comparison logic array. |
