| 摘要 |
A semiconductor integrated circuit is provided. First and second voltage generation units generate a first voltage and a second voltage with respect to a temperature rise, respectively. First and second current generation units generate a first current and a second current having a negative characteristic with respect to a temperature rise in response to a voltage comparison signal, respectively. A voltage comparison unit compares a voltage level of a first current transfer node with a voltage level of a second current transfer node and generates the voltage comparison signal according to the comparison result. A reference voltage output unit is connected in series to the second voltage generation unit and outputs a reference voltage maintaining a set level, without regard to a temperature variation, in proportion to a third current generated in response to the voltage comparison signal. |
