| 摘要 |
In the present invention, a workpiece on which a silicon oxide film is formed is placed on the surface on a platform in a chamber; HF gas and NH3 gas, which are reaction gases, are discharged onto the workpiece on the platform via a plurality of gas discharge holes (62, 63) on a shower plate (58) provided above the platform so as to correspond to the workpiece placed on the platform; and a treatment for causing a reaction between the reaction gases and the silicon oxide film on the surface of the workpiece is performed. Subsequently, the reaction product is heated and removed by decomposition, whereby etching is performed. The shower plate (58) is divided into a plurality of regions (58a, 58b) in correspondence with the workpiece, and the gas discharge holes in one or more of the regions (58a, 58b) is blocked to control distribution of the HF gas and/or the NH3 gas. |
