Integrated non-volatile memory device e.g. analog memory has surface contact terminal zone formed in non-volatile space charge regions, while counter-contact connector is formed in area of ferroelectric layer

摘要

The device has surface contact (S) with the associated mating contact (O). A ferroelectric layer (11) made of bismuth ferrite is used as a conductive channel of variable conductivity and the contact surface. The associated counter-contact is designed as rectifying contact by an applied voltage between surface and associated contact. The surface contact terminal zone (14) is formed in non-volatile space charge regions (15) and/or counter-contact connector is formed in the area of ferroelectric layer.