发明名称 |
THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>The present invention relates to a thin film transistor, a thin film transistor display panel including the same, and a manufacturing method thereof. The thin film transistor according to one embodiment of the present invention comprises a gate electrode; a gate insulating film which is located the above or below the gate electrode; a channel region which overlaps with the gate electrode while placing the gate insulating film therebetween; and a source region and a drain region which are located in the same layer as the channel region, are connected to the channel region and face to each other on the basis of the channel region, wherein the channel region, the source region, and the drain region include an oxide semiconductor, and wherein the carrier concentration of the source region and the drain region is larger than the carrier concentration of the channel region.</p> |
申请公布号 |
KR20130136063(A) |
申请公布日期 |
2013.12.12 |
申请号 |
KR20120059605 |
申请日期 |
2012.06.04 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
LEE, JE HUN;SONG, JUN HO;YEO, YUN JONG;JUNG, HWA DONG |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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