METHOD AND APPARATUS FOR PROVIDING IMPROVED BACKSIDE METAL CONTACTS TO SILICON CARBIDE

摘要

Embodiments of a method and apparatus are disclosed for providing improved backside metal contacts to silicon carbide. Embodiments include depositing a barrier layer on the bottom surface of a silicon carbide wafer. The barrier layer is located between the silicon carbide wafer and a silicon layer. The silicon carbide wafer is separated into individual silicon carbide die. Embodiments further include mechanically scrubbing each silicon carbide die on the top surface of a package, forming a gold-silicon eutectic solder that bonds the silicon carbide die to the package. The barrier layer reduces or eliminates diffusion of species into the gold-silicon eutectic solder to reduce or eliminate voids in the gold-silicon eutectic solder.