发明名称 |
ROTATABLE AND TUNABLE HEATERS FOR SEMICONDUCTOR FURNACE |
摘要 |
A method for forming a layer of material on a semiconductor wafer using a semiconductor furnace that includes a thermal reaction chamber having a heating system having a plurality of rotatable heaters for providing a heating zone with uniform temperature profile is provided. The method minimizes temperature variations within the thermal reaction chamber and promotes uniform thickness of the film deposited on the wafers. |
申请公布号 |
US2013330938(A1) |
申请公布日期 |
2013.12.12 |
申请号 |
US201313964150 |
申请日期 |
2013.08.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WEI ZIN-CHANG;WU HSIN-HSIEN;CHANG CHUN-LIN |
分类号 |
H01L21/324 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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