| 摘要 |
PROBLEM TO BE SOLVED: To provide a sense amplifier circuit for a resistor type memory for providing a high speed response time, a strong noise tolerance, a low voltage operation, a wide voltage head room, and a fewer sense error.SOLUTION: A sense amplifier circuit for a resistor type memory includes a resistor type memory current sense amplifier circuit having a differential output terminal, first and second input terminals, a pre-charge transistor, a current modulation transistor directly connected to a pre-charge transistor; a pre-charge configuration provides a high peak current to a bit line and a reference line during a stage of "ready" or "pre-charge" of the current sense amplifier circuit; the current modulation transistor is so configured as to operate in a saturation area mode during a stage of at least "set" or "amplification"; and since the current modulation transistor continuously averages the bit line current and the reference line current during a stage of "set" or "amplification", a noise tolerance of the circuit is increased, and latch is performed at differential output terminals during a stage of "go" or "latch" on the basis of a positive feedback of a latch circuit whose logical value of "0" or "1". |
