发明名称 |
PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION ELEMENT MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion element which prevents decrease in a short-circuit current density caused by carrier recombination of a photoelectric conversion layer composed of a CIGS film on a back electrode side and which has excellent adhesion between the photoelectric conversion layer and the back electrode; and provide a manufacturing method of the photoelectric conversion element.SOLUTION: A photoelectric conversion element comprises a back electrode and a photoelectric conversion layer including a CIGS film composed of a CIGS-based semiconductor compound on a substrate. On a surface of the back electrode, a plurality of nanoparticles each including a CuGaSe-based compound composed of Cu, Ga and Se at least on a surface are arranged in a dispersed manner. |
申请公布号 |
JP2013251331(A) |
申请公布日期 |
2013.12.12 |
申请号 |
JP20120123351 |
申请日期 |
2012.05.30 |
申请人 |
FUJIFILM CORP |
发明人 |
MURAKAMI NAOKI;MORIWAKI KENICHI |
分类号 |
H01L31/04;C23C14/06;H01L21/363 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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