发明名称 |
METHOD FOR MAKING LIGHT EMITTING DIODE |
摘要 |
A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A cermet layer is formed on the second semiconductor layer. The substrate is removed to form an exposed surface. A first electrode is applied to cover the entire exposed surface of the first semiconductor layer. A second electrode is applied to electrically connected to the second semiconductor layer. |
申请公布号 |
US2013330865(A1) |
申请公布日期 |
2013.12.12 |
申请号 |
US201213729627 |
申请日期 |
2012.12.28 |
申请人 |
TSINGHUA UNIVERSITY;HON HAI PRECISION INDUSTRY CO., LTD. |
发明人 |
ZHU JUN;ZHANG HAO-SU;ZHU ZHEN-DONG;LI QUN-QING;JIN GUO-FAN;FAN SHOU-SHAN |
分类号 |
H01L33/58 |
主分类号 |
H01L33/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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