| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor storage device capable of operating stably, and a driving method of the same.SOLUTION: A semiconductor storage device comprises a variable resistive element. When an initialization operation is performed for alternately and plural times performing setting (reducing resistance) and resetting (increasing resistance)of the variable resistive element, a plurality of memory cells are selected by selecting one or a plurality of word lines and a bit line group including a plurality of bit lines, and pulses of a set voltage Vand a reset voltage Vare alternately applied plural times from the bit line side to each of the plurality of memory cells with a constant voltage Vbeing applied to a selected source line. |
