| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has resistance against external stress and electrostatic discharge, and high reliability, while achieving reduction in thickness and size of the device; prevent defects in shape and characteristics caused by external stress or electrostatic discharge also in a manufacturing process to manufacture a semiconductor device with good yield; and manufacture a semiconductor device with high productivity at low costs.SOLUTION: A conductive shield body that shields to surround a semiconductor integrated circuit prevents electrostatic breakdown (malfunction of circuit and damage to semiconductor element) of the semiconductor integrated circuit caused by electrostatic discharge. The conductive shield body is formed by electrical connection by a plating method. The use of the plating method for forming the conductive shield body makes it possible to manufacture a semiconductor device with high productivity at low costs. |
