| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor wafer including a silicon-based adhesive layer with an even thickness on a surface, without including air bubbles between a semiconductor wafer and the silicon-based adhesive layer.SOLUTION: There is provided a method of manufacturing a semiconductor wafer including a silicon-based adhesive layer. The method comprises at least the following steps: (1) a step of applying a liquid silicon-based adhesive agent on one surface of a semiconductor wafer and (2) a step of coating the surface of the adhesive agent with a non-fluorine detachable film, or a step of simultaneously performing the step (1) and the step (2), and (3) a subsequent step of curing the adhesive agent in a certain thickness with the detachable film adhered. |
