发明名称 |
RECESSING AND CAPPING OF GATE STRUCTURES WITH VARYING METAL COMPOSITIONS |
摘要 |
A method for recessing and capping metal gate structures is disclosed. Embodiments include: forming a dummy gate electrode on a substrate; forming a hard mask over the dummy gate electrode; forming spacers on opposite sides of the dummy gate electrode and the hard mask; forming an interlayer dielectric (ILD) over the substrate adjacent the spacers; forming a first trench in the ILD down to the dummy gate electrode; removing the dummy gate electrode to form a second trench below the first trench; forming a metal gate structure in the first and second trenches; and forming a gate cap over the metal gate structure. |
申请公布号 |
US2013328111(A1) |
申请公布日期 |
2013.12.12 |
申请号 |
US201213491857 |
申请日期 |
2012.06.08 |
申请人 |
XIE RUILONG;HORAK DAVID V.;FAN SU CHEN;BALASUBRAMANIAN PRANATHARTHIHARAN HARAN;INTERNATIONAL BUSINESS MACHINE CORPORATIONS;GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
XIE RUILONG;HORAK DAVID V.;FAN SU CHEN;BALASUBRAMANIAN PRANATHARTHIHARAN HARAN |
分类号 |
H01L21/28;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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