| 发明名称 |
ADJUSTABLE AVALANCHE DIODE IN AN INTEGRATED CIRCUIT |
| 摘要 |
An avalance diode including, between two heavily-doped regions of opposite conductivity types arranged at the surface of a semiconductor region, a lightly-doped region, with length L of the lightly-doped region between the heavily-doped regions approximately ranging between 50 and 200 nm. |
| 申请公布号 |
US2013328150(A1) |
申请公布日期 |
2013.12.12 |
| 申请号 |
US201313895715 |
申请日期 |
2013.05.16 |
| 申请人 |
STMICROELECTRONICS INTERNATIONAL NV |
发明人 |
BIANCHI RAUL ANDRES;FONTENEAU PASCAL |
| 分类号 |
H01L31/0256;H01L27/144;H01L31/18 |
主分类号 |
H01L31/0256 |
| 代理机构 |
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