发明名称 Process for Producing Silicon and Oxide Films from Organoaminosilane Precursors
摘要 A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: wherein R is selected from a C1-C10 linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C5-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, R1 is selected from a C3-C10 linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C6-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R1 in formula A can be combined into a cyclic group and R2 representing a single bond, (CH2), chain, a ring, C3-C10 branched alkyl, SiR2, or SiH2.
申请公布号 US2013330937(A1) 申请公布日期 2013.12.12
申请号 US201313964658 申请日期 2013.08.12
申请人 AIR PRODUCTS AND CHEMICALS, INC. 发明人 XIAO MANCHAO;LEI XINJIAN;BOWEN HEATHER REGINA;O'NEILL MARK LEONARD
分类号 H01L21/02 主分类号 H01L21/02
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