发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING A GLASS SUBSTRATE |
摘要 |
A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallisation region is formed on the machined second surface of the semiconductor wafer. |
申请公布号 |
US2013328183(A1) |
申请公布日期 |
2013.12.12 |
申请号 |
US201313966492 |
申请日期 |
2013.08.14 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
VON KOBLINSKI CARSTEN;LACKNER GERALD;SCHRETTLINGER KARIN;OTTOWITZ MARKUS |
分类号 |
H01L23/498 |
主分类号 |
H01L23/498 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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