| 摘要 |
There is provided a solid-state image sensor including unit pixels each including a photoelectric transducer which generates a charge corresponding to an amount of incident light and accumulates the charge therein, a first transfer gate which transfers the charge accumulated in the photoelectric transducer, a charge holding region in which the charge transferred from the photoelectric transducer by the first transfer gate is held, a second transfer gate which transfers the charge held in the charge holding region, a floating diffusion region in which the charge transferred from the charge holding region by the second transfer gate is held to be read out as a signal, and a reset section which resets the charge in the floating diffusion region. The first transfer gate and the reset section are connected to an identical drive section through a drive line shared thereby, and are simultaneously driven by the drive section. |
