METHOD FOR PRODUCING SILICON CARBIDE CRYSTAL

摘要

There is provided a method for producing a silicon carbide crystal, including the steps of: preparing a mixture by mixing silicon small pieces and carbon powders with each other; preparing a silicon carbide powder precursor by heating the mixture to not less than 2000� C. and not more than 2500� C.; preparing silicon carbide powders by pulverizing the silicon carbide powder precursor; and growing a silicon carbide crystal on a seed crystal using the silicon carbide powders in accordance with a sublimation-recrystallization method, 50% or more of the silicon carbide powders used in the step of growing the silicon carbide crystal having a polytype of 6H.