SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device according to the present invention has a gate structure including a gate insulating film and a gate electrode on a silicon substrate. The gate structure is equipped with spacers on both sides. The silicon substrate areas of both sides of the spacer have silicon germanium patterns which have: a protruding shape in order to have a top surface which is higher than the bottom surface of the gate structure; a furrowed part between the protruding part and the spacer by including a fossette having an angle about the flat surface of the silicon; and an impurity area. A blocking insulating film is arranged along the profile of the silicon germanium pattern and the spacer surface while maintaining the furrowed part between the fossette of the silicon germanium pattern and the spacer. An insulating wing pattern is mounted in the form of being arranged on the upper partial surface of the blocking insulating film and filling the furrowed part between the silicon germanium pattern and the spacer.