发明名称 |
Growth layer for photovoltaic applications and method of producing the same |
摘要 |
<p>Sputtered zinc oxide layer is used to improve and control the crystalline properties of a molybdenum back contact used in photovoltaic cells. Optimum thicknesses for the zinc oxide layer are identified.</p> |
申请公布号 |
EP2671259(A2) |
申请公布日期 |
2013.12.11 |
申请号 |
EP20120707120 |
申请日期 |
2012.02.03 |
申请人 |
PILKINGTON GROUP LIMITED |
发明人 |
MCSPORRAN, NEIL |
分类号 |
H01L31/02;H01L31/032;H01L31/0392;H01L31/0749 |
主分类号 |
H01L31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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