| 摘要 |
Disclosed is a semiconductor device structure including a III-V compound semiconductor material layer, a polycrystalline CVD diamond material layer, and an interface region, having a diamond nucleation layer, between the III-V compound semiconductor material layer and the polycrystalline CVD diamond material layer. A Raman signal generated from a region having the diamond nucleation layer exhibits an sp3 carbon peak at 1332 cm−1 having a full width half-maximum of no more than 5.0 cm−1. The Raman signal further exhibits one or both of the following characteristics: (i) an sp2 carbon peak at 1550 cm−1 having a height no more than 20% of a height of the sp3 carbon peak; and (ii) the sp3 carbon peak at 1332 cm−1 is no less than 10% of local background intensity. The diamond nucleation layer further includes an average nucleation density range of 1×108 cm−2 to 1×1012 cm−2. |
