发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE HAVING MASK PATTERN FOR HIGH QUALITY SEMICONDUCTOR DEVICE |
摘要 |
The present invention relates to a high quality semiconductor substrate manufacturing method including a step of forming a nitride semiconductor layer and a mask patter on a substrate such as a sapphire substrate, a step of reforming the surface to become porous using a dry etching method before or after growing the nitride semiconductor layer once again, a step of re-growing the nitride semiconductor layer with a low defect density as a template layer, and a step of producing a high quality semiconductor device with an improved inner quantum yield and a light extraction efficiency. [Reference numerals] (S10) Form a nitride semiconductor layer;(S20) Form an insulating film pattern;(S30) Dry porous etch;(S40) Re-grow the nitride semiconductor layer |
申请公布号 |
KR20130135440(A) |
申请公布日期 |
2013.12.11 |
申请号 |
KR20120058992 |
申请日期 |
2012.06.01 |
申请人 |
KOREA POLYTECHNIC UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION |
发明人 |
NAM, OK HYUN;LEE, WON SEOK;LEE, DONG HEON;WOO, SEO HWI;JANG, JONG JIN |
分类号 |
H01L33/22 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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