METHOD OF FABRICATION OF TRENCH MOS BARRIER SCHOTTKY (TMBS) HAVING MULTIPLE FLOATING GATES

摘要

A semiconductor rectifier is provided which includes a semiconductor substrate having a first type of conductivity. An epitaxial layer is formed on the substrate. The epitaxial layer has the first type of conductivity and is more lightly doped than the substrate. A plurality of floating gates is formed in the epitaxial layer and a metal layer is disposed over the epitaxial layer to form a Schottky contact therebetween. A first electrode is formed over the metal layer and a second electrode is formed on a backside of the substrate.