| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can enhance coverage of the barrier metal layer or the wiring material. SOLUTION: Coverage of the barrier metal layer or the wiring material can be enhanced by employing a single material in the vicinity of a contact hole, thereby preventing occurrence of irregularities on the sidewall of a contact. Furthermore, disconnection of the barrier metal layer can be prevented because it can be formed stably, and the wiring material can be prevented from oozing onto the substrate. COPYRIGHT: (C)2009,JPO&INPIT |
